Transphorm release a new 650V GaN FET

Transphorm Inc., a GaN (gallium nitride) semiconductors designer and manufacturer, today announced its latest portfolio addition: the TPH3212PS. Available in a TO-220 package, the device has an on-resistance of 72 mOhms (mΩ).

To date, Transphorm’s product portfolio consists of 600V and 650V discrete FETs spanning TO-220, TO-247, and PQFN88 packages for power levels up to 4.5 kilowatts. The TPH3212PS fills a power level gap in the company’s second generation product line, specifically between the 52mΩ and 110mΩ FETs.

“Transphorm aims to enable the market by delivering GaN in the highest quality, highest reliability format as possible,” said Umesh Mishra, CTO, Transphorm.

“We recognize GaN is not just a drop-in replacement for silicon MOSFETs used today. Board redesign and system modifications are required to capitalize on GaN’s complete set of benefits from performance through to system cost. If we can minimize that learning curve by working with well-known packages and a configuration that behaves similarly to a MOSFET—we believe the industry will move further faster.”

Availability, Pricing and Support

Fully-qualified and in production, the TPH3212PS is priced at US$8.94 in 1000-unit quantities. The product is currently supported by a SPICE program and application notes. A full evaluation kit for 2.5 kilowatt hard-switched half-bridge, buck or boost designs is available for pre-order and priced at US$250. Visit here for details.