EPC corp is "relaxing" Gallium Nitride pitch on GaN FET

EPC corp. announce the extension of their power transistor portfolio with a high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.

The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm bal l pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 4.6 mm x 2.6 mm footprint.

Compared to state-of-the art silicon power MOFSETs with similar on-resistance, the EPC2029 is smaller and has many times superior switching performance. TheEPC2029 is ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.

To simplify the evaluation process of this latest high performance eGaN FET, the EPC9046 development board, featuring two EPC2029 eGaN FETs in a half-bridge topology with onboard gate drive is available. TheEPC9046 allows for easy “in circuit” performance evaluation of the EPC2029 by including all critical components and is laid out for optimal switching performance with additional area to add buck output filter components.

The new 80 V EPC2029 and corresponding development board EPC9046 are both available for immediate delivery from Digi-Key.