Corsair, a leader in parts and components for PCs and laptops, announced the release of their last PSU (Power Supply Unit), the AX1600i. This 1600W power supply is mainly targeting gamers PCs. The 1.6kW power is large enough to supply a Desktop PC with a large microprocessor and several energy consuming graphic cards.

The real innovation in this specific PSU is that it’s using GaN based semiconductor:

The AX1600i uses Transphorm’s TPH3205WS 650V FETs in a bridgeless totem-pole power factor correction (PFC) topology. The boost PFC stage is then very efficient and taking the most of GaN technology. They replace Silicon SuperJunction MOSFETs that were used in previous Corsair power supplies topologies in a 2-phased interleaved PFC topology, less efficient. The power supply is now placed at a more than 80 PLUS Titanium rating.

Corsair Power supply unit for desktop gamer PC GaN gallium nitride devices

Courtesy of

Corsair choose Transphorm as it seems to be the best options for volume production and matching the characteristics and topology they were aiming at. They come in TO247 package, similarly to most SuperJunction MOSFETs. The semiconductor start-up has been fully involved in the design and test process to reach the results presented now.

Courtesy of

The AX1600i is already available and priced at USD499.

Here are some of the main improvements advertised by Corsair:

  • Power output: 1600W, 6.5% increase
  • Size reduction: 20 mm shorter, 11% smaller
  • Thermal impact: equivalent 50°C continuous output
  • Audible noise impact: slower fan speed, less noise at full load

GaN was expected to be used in consumer power supplies:

This news is totally in line with PntPower market and technology analysis and publications: The best fitting market segment for GaN today is within power supplies. We expected to see more laptop power supplies and desktop power supplies, but only the power range changes.


Infineon Technologies AG expands its 1200 V discrete IGBT product line. The devices, rated now at up to 75 A, are co-packed with a diode in TO-247PLUS packages.

Typical targeted applications are motor drives, photovoltaic inverters or UPS (uninterruptible power supplies). A few emerging applications also required this kind of device: battery charging and other energy storage systems.

The new TO247PLUS package delivers, according to Infineon, double current rating, and a larger lead frame area (thus bigger IGBT dies and lower thermal resistance) compared to T0-247-3 packages. A 4-pin version is also available, providing Kelvin emitter source pin for lower inductance gate-emitter control loop and reduced switching losses.

The 1200V devices are available in T0-247PLUS 3 pins and 4 pins packages, at 40 A, 50 A and 75 A, including the full current free-wheeling diode, in high volume.

Bilateral and higher voltage GaN… but not at the same time:

Transphorm is a California Wide Band Gap semiconductor start-up, part of the leading suppliers of power GaN devices today. They are part of the PowerAmerica consortium too. With the help of the latter, they developed and already ship limited samples of a bilateral GaN based device. They also developed a 900V version of their GaN devices.

Bilateral devices have been an interesting solution for innovative converter topologies for a long time. Fuji electric released a new type of IGBT power modules made for three-level conversion using a solution close to bilateral devices. The topology is called AT-NPC and uses RB-IGBT (Reverse Blocking IGBT). It’s also a very good solution for matrix converter (AC-AC converters mainly used for motor drives), which are double-side converters. Bilateral devices help reduce the device count by a factor of 2 to 4 for these innovative topologies.

Getting to higher voltage is also a key target for Gallium Nitride. The release of a 900V GaN device is good news for the market.

All these developments have been partially founded and had a technical help from PowerAmerica, which accelerated the development process – acknowledged Primit Parikh, COO of Transphorm.