Tag Archive for: IGBT

ON Semiconductor Corporation announced today that the U.S. Federal Trade Commission has accepted a proposed consent order for public comment and has terminated the Hart-Scott-Rodino waiting period applicable to ON Semiconductor’s proposed acquisition of Fairchild Semiconductor International, Inc. Under the proposed consent order and in order to satisfy the FTC’s remaining concerns, prior to the closing of the acquisition of Fairchild, the FTC required that ON Semiconductor dispose of its planar insulated gate bipolar transistor (“Ignition IGBT”) business, which business generated less than $25 million in revenue during fiscal year 2015. In satisfaction of this requirement, ON Semiconductor announced today that it has entered into a definitive agreement with respect to the divestiture of the Ignition IGBT business to Littelfuse, Inc. and has also entered into a separate definitive agreement with Littelfuse to sell its transient voltage suppression (“TVS”) diode and switching thyristor product lines, for a combined $104 million in cash. No manufacturing assets will be transferred by ON Semiconductor in connection with the divestiture of the Ignition IGBT business or the sale of the TVS and thyristor businesses, and both asset sales are expected to close on August 29, 2016.

ON Semiconductor acquisitions conditions Fairchild Littelfuse

The completion of ON Semiconductor’s previously announced tender offer (the “Offer”) to purchase all of the outstanding shares of common stock of Fairchild for $20.00 per share in cash remains subject to certain customary terms and conditions set forth in the Offer to Purchase, dated December 4, 2015, as amended (the “Offer to Purchase”), and other related materials by which the Offer is being made.

The condition to the Offer relating to the termination or expiration of required waiting periods under the HSR Act has been satisfied. The proposed FTC consent order is subject to public comment for 30 days and to final approval by the FTC, although this will not affect the parties’ ability to close the transaction when all other conditions to closing have been satisfied.

Infineon Technologies AG presents its latest power module family HybridPACK™ Double Sided Cooling (DSC) for hybrid and electric vehicles at the PCIM 2016 tradeshow. The new power modules have dimensions of 42 mm x 42.4 mm x 4.77 mm. They target HEV applications such as main inverters and generators with a typical power range of 40 to 50 kW. In order to support higher power, they can be used in parallel configurations.

Infineon hybrid vehicle power module double side cooling

With only 15 nH, the stray inductance is very low while blocking voltage was increased to 700 V. Both factors support the development of inverter systems with reduced switching losses of about 25 percent and very high efficiency. Thanks to the integrated isolation, the module can be directly attached to a cooler without external isolation thus simplifying system integration. Each integrated IGBT chip is equipped with an on-chip current sensor for overcurrent protection. In addition, an on-chip temperature sensor provides derating and fast shut-off in case of over-temperature. The direct and precise sensing improves system monitoring. It also helps to simplify the functional safety architecture of automotive system suppliers and car manufacturers.

By combining double sided chip cooling with electrical isolation of the heat sinks, the thermal resistance R thJC of the HybridPACK DSC is significantly reduced to 0.1 Kelvin/Watt (K/W). In comparison, today’s power module HybridPACK 1 has a thermal resistance of 0.12 K/W. The HybridPACK DSC module technology also improves the electrical performance. Stray inductance is one major parameter, defined by module size and the careful routing of the current path through the module. The HybridPACK DSC value of only 15 nH is about 40 percent lower compared to reference modules. The result is a reduction of switching losses by 25 percent.

Availability of HybridPACK DSC power modules

The first member of the HybridPACK DSC family is the FF400R07A01E3_S6 implementing I Cnom of 400 A and V CES of 700 V in half-bridge configuration. Engineering samples will be available in September 2016. A further product in the family implementing I Cnom of 200 A and V CES of 700 V in a full-bridge configuration will be offered as engineering samples in October 2016. Further variants featuring different power ranges are under development.

Ideal Power Inc., a developer of innovative power conversion technologies, reported its semiconductor fabricator successfully tested Bi-Directional Bi-Polar Junction TRANsistor (B-TRAN™) silicon dies and test results validate key characteristics of the semiconductor power switch. The test results can be found in the company’s updated B-TRAN White Paper. The results confirm central B-TRAN™ elements and operational modes are consistent with third party device simulations that predict significant performance and efficiency improvements over conventional power switches such as SCRs, IGBTs and MOSFETs.

B-TRAN™ device is a symmetric double-sided structure that presents opportunities for high current density operation at high efficiency.

“This validation of key characteristics of the B-TRAN™ technology is a significant step forward in demonstrating B-TRAN’s ability to improve energy efficiency across a wide range of products and applications,”

said Dr. Richard Blanchard, B-TRAN™ co-inventor and holder of over 200 patents primarily related to power semiconductors including the widely used trench MOSFET.

“The device has tremendous implications for the power industry.”

“These exciting results of the first tested B-TRAN™ structures validate key characteristics of the device and confirm our belief that B-TRANs can be a disruptive new force in many power conversion applications,” said Bill Alexander, CTO of Ideal Power and co-inventor of the B-TRAN™. “The predicted extremely low forward voltage drop and fast, low loss switching of the B-TRAN™ are each approximately ten times better than conventional switches. B-TRAN’s high current density and native bi-directional capability can lead to very high efficiency power control and conversion at very low cost points. We expect these anticipated efficiency improvements to translate to a substantial cost-performance advantage over current generation power semiconductor devices, which opens a multi-billion dollar market opportunity for the B-TRAN™ and is generating licensing inquiries from power semiconductor companies.”

Ideal Power plans to introduce the B-TRAN™ into the rapidly growing IGBT power semiconductor market, estimated to be close to $5 billion in 2015 according to Point The Gap . The next major milestone for commercializing the B-TRAN™ will be testing a fully-packaged device.

Ideal Power believes its new B-TRAN™ technology can potentially address up to 50% of the power semiconductor market as a replacement for older, less efficient power switch technologies such as IGBTs and MOSFETs, as well as the newer gallium nitride (GaN) and silicon carbide (SiC) devices. Potential addressable markets for B-TRAN-based products include very low loss solid-state DC and AC contactors, electric vehicle drivetrains, variable frequency drives, solar photovoltaic inverters, bi-directional energy storage and microgrid power conversion systems, matrix converters and other power conversion products.

Based on third party simulations and testing to date, the Company expects the B-TRAN to deliver 10 to 200 times the cost-performance of current power semiconductor switches, depending on the switch type and configuration, with cost-performance being defined as the combination of device cost and on-state resistance. For a given cost, the B-TRAN™ is expected to have 10 to 200 times lower on-state resistance, while simultaneously having up to 10 times faster switching than other silicon-based switches.

Mitsubishi Electric Corporation announced today that it has developed a next-generation power module called X-Series New Dual HVIGBT module for traction and electric power applications in heavy industries. The new module features higher power density and efficiency for inverters, as well as a standardized package that allows for a flexible design of inverter systems.

Samples of the 3.3kV (LV100) version of the New Dual module will be available for shipping from March 2017. That will be followed by 1.7kV, 3.3kV (HV100), 4.5kV and 6.5kV versions in that order from 2018 onwards. The company also plans to add a lower-than 1.7kV version to the lineup in the future.

High-power modules are key devices for controlling power conversion in electronic systems in a wide range of power classes from several kilowatts up to several megawatts. Until now, modules with a maximum voltage rating of up to 6.5kV and a maximum current rating of several thousand amperes have been commercially available.

The New Dual HVIGBT module will satisfy demand for efficient, high power density semiconductor devices with a range of current and voltage ratings, while contributing to higher power output and efficiency in inverters by adopting the latest seventh-generation IGBTs and RFC diodes. Meanwhile, the standardized package dimensions will allow manufacturers of industrial electronics to simplify design and secure multiple sources for inverters.

Product Lineup (plan)

Model Package
Connection Dimensions Sample
New Dual
LV100 6kV 1.7kV 900A 2in1 W:100mm
2018 or later
3.3kV 450A March 2017
HV100 10kV 3.3kV 450A 2018 or later
4.5kV 330A
6.5kV 225A


Product Features:

  1. Contributing to high energy efficiency and high power density
    • The seventh-generation IGBTs adopting CSTBTTM and RFC diodes realize low power loss in inverter systems.
    • Improved package technology and low parasitic inductance enable maximum performance.
    • Three AC main terminals on the LV100 package spread and equalize current density, contributing to increased inverter capability.
  2. Common frame size supports more diverse inverter configurations and capacity
    • LV100 and HV100 modules have a common package design.
    • Simple, standard connections allow for optimal system design and a range of current ratings.
    • Lineup ranges from 1.7 to 6.5kV.
    • Improved flexibility and scalability for system configuration.
  3. Contributing to higher design efficiency by the use of a standardized new package
    • Compatible with terminal and attachment locations of Infineon Technologies AG (Germany) products.


Dynex headquarter

Dynex headquarter

Dynex Semiconductor today announced that its parent company, Zhuzhou CSR Times Electric Co Ltd. held a ceremony at its facility in China to mark the opening of a new $240 million IGBT production base in Zhuzhou. The new production base, the first of its kind in China, and the second worldwide, will produce high-power IGBT chips and modules using 8-inch silicon. Annual output of the first phase of this new production line is expected to reach 120,000 wafers and 1 million pieces of IGBT modules. This IGBT line is being operated by the newly formed Semiconductor Business Unit of CSR Times Electric, of which Dynex is the European subsidiary.

 The technology being used in the new facility has been developed at Lincoln in the UK by the multinational CSR Zhuzhou R&D Center based at Dynex Semiconductor Ltd. The UK R&D centre was established in 2010 to focus on leading edge power semiconductor technology and specifically the next generation of IGBT products. CSR began construction of the new 8-inch production line in May 2012. Throughout the build, equipment installation and commissioning Dynex has played a leading role in providing technical advice, support and staff training both in Lincoln and in China.

 The IGBT is the key component in today’s energy efficient electric energy conversion systems used in electric locomotives, metros, electric and hybrid electric vehicles, electric power grids and renewable energy plants. Using the latest silicon wafer fabrication equipment and the latest process technologies, the new line will initially produce high power modules using the latest soft punch through field stop and trench technologies.

 Dr Paul Taylor, President and CEO of Dynex Commented:

“Since the acquisition of Dynex by CSR Times Electric in 2008 there has been a rapid development in our IGBT capability. We began with 4-inch wafers, then up graded to 6-inch at our plant in Lincoln. We then extended our technology to support the design of this new facility. It complements our base in the UK by giving us access to a world leading 8-inch IGBT wafer fabrication facility and a high volume module assembly line”

 “Our rapid development does not stop there “continued Dr Taylor “the new line has been kitted out with the latest equipment, and the next phase of expansion is already being planned. This targets key markets such as electric automotive and renewable energy. So at our UK R&D Center we are already working on designing the next generation of advanced silicon and silicon carbide power devices, and are busy recruiting new staff to expand our multinational research, design and development teams to meet this exciting new challenge”

Source: http://www.powerpulse.net/story.php?storyID=30347

Infineon Technologies AG is expanding its Austrian site in Villach. Core emphasis is the on the expansion of expertise for the manufacturing of the future as well as research and development (R&D). “Pilot Space Industry 4.0” will realize and put to the test an innovative concept for networked and knowledge-intensive production. Research on new materials and technologies will also be intensified. Infineon’s expansion plans foresee investments and research costs amounting to a total of € 290 million, creating approximately 200 new jobs in the period from 2014 to 2017, primarily in R&D.

Peter Schiefer, President of Operations at Infineon Technologies and responsible for the worldwide production sites, explains:

“The continuing development of Villach is a part of our group-wide manufacturing strategy. At the site, important developments will be advanced and production-ready innovative technologies will be transferred by Infineon to other sites. At the same time our strategy will include expansion of our volume manufacturing on 300 millimeter thin wafers in Dresden and on 200 millimeter wafers in Kulim, Malaysia.”

Sabine Herlitschka, CEO of Infineon Technologies Austria AG, says:

“With the expansion concept Villach is reinforcing its important role as a factory of innovation and a competence center for power electronics within the corporate group. We’re making an important contribution to the success of the company by coupling the innovation factory in Villach with volume production in Dresden using the example of 300 millimeter thin wafer production for power semiconductors.”

Herlitschka added that this move will also develop a unique production cluster in Austria and Germany that is prominently visible throughout Europe.

Industry 4.0 Pilot Space

Infineon will construct a leading-edge building complex for research, production and measurement technology workstations. Logistics, miscellaneous infrastructures and the plant equipment will also be expanded to meet future demand. This will let Infineon mobilize the productivity and automation called for in international competition, while at the same time increasing flexibility.

Infineon has been actively engaged in the Industry 4.0 initiative from the very beginning; its pilot space in Villach is another step towards realizing this vision. Industry 4.0 embodies a paradigm shift in value creation and brings enormous opportunities to European industry. The Infineon Austria project is an important contribution towards increasing European competitive strength. The pilot operation in Villach will feature production based on a cyber-physical system with highly modern production control and automation systems. Under the prerequisite of the highest possible data security and data integrity levels, the interaction of man and machine will attain a new dimension in the pilot facility. At the same time, Infineon will continue to pursue its goal of increased energy efficiency in production.

New Materials and Technologies

A wide-scale research program with innovations in materials, processes, technologies and system expertise is the second pillar of the Villach site expansion, supporting development of the next generation of energy-efficient products. Here the program focuses on the integration of innovative substrates such as gallium nitride and silicon carbide, on MEMS (Micro-Electro-Mechanical Systems) and sensor technologies as well as on the continuing development of 300 millimeter thin wafer technology.

Regional Expertise

The many years of growth at Infineon Technologies Austria AG have been supported by a tightly knit collaborative network connecting the company, the city of Villach, the Austrian province of Carinthia, the Republic of Austria and European institutions. As a result it has been possible to turn southern Austria into a high-tech region and to contribute to raising the region’s profile and increasing its competitive strength in the sense of “Smart Specialization”. With the “Pilot Space Industry 4.0” project Infineon is taking the next step in development, meaning it will also collaborate even more intensively with research partners, universities, technical institutes and SMEs in the innovation system. Peter Kaiser, Governor of the Austrian province of Carinthia, comments: “Carinthia and Infineon are an excellent fit, in terms of Innovation, Investment and Internationality. This Triple-I is the spirit of Carinthia in international competition and also stands exactly for Infineon as one of the internationally successful corporate leaders of our province. Together we’ll write many success stories like ‘Pilot Space Industry 4.0’. Such investments are proof of confidence in reforms and continuing development plans for our attractive, future-oriented business location Austria.”