Infineon Technologies expand its silicon carbide (SiC) product portfolio with 650 V devices. Newly launched CoolSiC™ MOSFETs from Infineon is addressing applications like server, telecom and industrial SMPS, Solar energy systems, energy storage, UPS, motor drives as well as EV-charging.
The CoolSiC MOSFET 650 V devices are rated from 27 mΩ to 107 mΩ. They are available in classic TO-247 3-pin as well as TO-247 4-pin packages, which allows for even lower switching losses. As for all previously launched CoolSiC MOSFET products, the new family of 650 V devices are based on Infineon’s state-of-the-art trench semiconductor technology.
The CoolSiC MOSFET 650 V family comprises eight variants housed in two through hole TO-247 packages. They can be ordered now. Three dedicated gate-driver ICs will be available starting March 2020.