ST is among the few vendors leading the development of the robust and efficient silicon-carbide power semiconductors. The 1200V SCT20N120 extends the family, with on-resistance (RDS(ON)) better than 290mΩ all the way to the 200°C maximum operating junction temperature. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.
In addition to their lower energy losses, ST’s SiC MOSFET permit switching frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight, and bill-of-materials costs. The SCT20N120’s high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.
The SCT20N120 comes with the added advantage of ST’s proprietary HiP247™ package with enhanced thermal efficiency, which allows reliable operation up to 200°C while maintaining compatibility with the industry-standard TO-247 power-package outline.
For further information please visit: http://www.st.com/sicmos
Our point of view:
ST Microelectronics is part of the few SiC MOSFET manufacturers. The leader in this field being the Kyoto-Japan based manufacturer Rohm. There are other players who preferred another technology (JFET, Bipolar) but the specific designs that they require does not make them great competitors. Today, MOSFET is the most used device.
1200V is the right voltage where Silicon Carbide material starts to give its potential. Applications as Renewable energies, Heavy industrial applications are among the targets. They represent a very good sales volume versus average price trade-off.