Freebird Semiconductor, a US manufacturer of high reliability GaN HEMTs, and Efficient Power Conversion (EPC) have entered into an agreement to develop products for high reliability, space and harsh environment applications based on EPC’s eGaN power transistors and ICs.
Simon Wainwright, president and CEO of Freebird Semiconductor said: “GaN technology will permit space applications to use the latest in high performance semiconductor material, whereas using silicon-based components in these applications produces systems that are behind the latest performance curves.”
“The superior conductivity and switching characteristics of GaN devices allow designers to greatly reduce system power losses, size, and weight. Given GaN’s superior state-of-the-art performance, coupled with its demonstrated ability to operate reliably under harsh environmental conditions and high radiation, GaN devices have a very bright future in space applications. We are excited to be supporting Freebird in the development of their GaN-based products,”
noted Alex Lidow, EPC CEO and co-founder.
In addition to collaborating on power systems product development, the two companies will be active in publishing the results of their work and giving joint presentations at professional conferences.