Mitsubishi Electric Corporation  announced today the launch of a new transfer-mold power semiconductor model in its lineup of Super-mini Dual-In-line Package Intelligent Power Modules (DIPIPMTM), embedded with Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC-MOSFET). It will launch on August 17.

Product Features

1) Top class low power consumption in the home appliance market

SiC-MOSFET reduces power consumption by about 70 percent compared with Mitsubishi Electric’s existing Super-mini DIPIPM, and contributes to an overall reduction in air conditioner power consumption
2) Simplified inverter system design

Footprint and pin configurations are compatible with Mitsubishi Electric’s existing Super mini DIPIPM Ver.6, PSSxxS92x6series,etc.
Designed with a high threshold voltage, SiC-MOSFET does not require a negative bias circuit, allowing simplification of the system design
Fewer external components due to use of embedded bootstrap diode with current-limiting resistor

Sales Schedule

Model Specification Shipment
PSF15S92F6 15A/600V August 17, 2016

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