Ascatron release SiC MOSFETs and Diodes

Ascatron is now a SiC devices company

Ascatron has announced the availability of Silicon Carbide (SiC) components using its in-house technology. The Swedish company raised founds last year in order to pivot. The business model is evolving from SiC epitaxy material manufacturing to a SiC device making. Their strategy to become an innovative SiC supplier is now on rails.

The spin-out from Acreo research center developed their own 3DSiC® technology in order to reach higher quality and performance, as they claimed. They have a semi-fabless business model, where SiC epitaxy is made in-house, in Sweden, and chip fabrication and packaging is outsourced.

Ascatron Diode SiC devices

Source: Ascatron

Available products

The first samples available are:

  • Diodes:
    • Schottky: 1200V – 15 A & 20 A
    • Schottky: 1700V – 20 A
    • PiN: 10kV – 2A

MOSFET devices are under development and will be available in 2018.

3DSiC® technology, based on Ascatron expertise in advanced SiC epitaxy material, has the potential to lower losses up to 30% compared to conventional solutions, says Ascatron.

Source: Press Release

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