Ascatron has announced the availability of Silicon Carbide (SiC) components using its in-house technology. The Swedish company raised founds last year in order to pivot. The business model is evolving from SiC epitaxy material manufacturing to a SiC device making. Their strategy to become an innovative SiC supplier is now on rails.
The spin-out from Acreo research center developed their own 3DSiC® technology in order to reach higher quality and performance, as they claimed. They have a semi-fabless business model, where SiC epitaxy is made in-house, in Sweden, and chip fabrication and packaging is outsourced.
The first samples available are:
Schottky: 1200V – 15 A & 20 A
Schottky: 1700V – 20 A
PiN: 10kV – 2A
MOSFET devices are under development and will be available in 2018.
3DSiC® technology, based on Ascatron expertise in advanced SiC epitaxy material, has the potential to lower losses up to 30% compared to conventional solutions, says Ascatron.
https://www.pntpower.com/wp-content/uploads/2017/09/ascatrondevice.jpg430600Alex Avronhttps://www.pntpower.com/wp-content/uploads/2018/01/Ptpower_green.pngAlex Avron2017-09-18 10:41:562017-09-20 15:27:49Ascatron release SiC MOSFETs and Diodes