First 1500V Super Junction MOSFET available at ST Micro

A new family of Power MOSFETs from STMicroelectronics allows designers of power supplies to maximize the power efficiency of their products while enhancing robustness and safety margins. The MDmesh^TM K5 devices are the first in the world to combine the benefits of super-junction technology with a drain-to-source breakdown voltage of 1500V; they have already captured important design wins with major customers in Asia, Europe, and the USA.

The new devices address the growing demand for higher output power for auxiliary switched-mode power supplies in servers, where power-supply robustness is a key factor in minimizing down-time, and in industrial applications such as welding and factory automation. For these applications, where power output ranges from 75W to 230W or above, super-junction MOSFET technology is the preferred choice because of its outstanding dynamic-switching performance.

ST’s MDmesh K5 Power MOSFET family takes this technology to a new level, with the lowest On-Resistance (R_ds(on)) per area and the lowest gate charge (Q_g) in the market, resulting in the industry’s best FoM (Figure of Merit)¹. The devices are ideal for all popular power-supply topologies, including standard, quasi-resonant and active-clamp flyback converters, and LLC² half bridge converters for applications where high efficiency (up to 96%) and output powers approaching 200W are required for a wide range of input voltages.

The first two members of the new family are the STW12N150K5 and the STW21N150K5, which offer maximum drain-to-source currents of 7A and 14A, respectively, with gate charge as low as 47nC (STW12N150K5) or On-Resistance as low as 0.9Ω (STW21N150K5). Both devices are offered in TO-247 packages in volume quantities at prices of $14 for 1,000 units.