ExaGaN, the French GaN for power electronics start-up, had started a partnership with X-Fab in 2015 to develop a mass manufacturing process of GaN transistors on 200mm wafers. It’s now done. They announced today they have solved issues related to defectivity, material stress and process integration. They are able to manufacture their G-FET devices in X-Fab fab dedicated to GaN process.
Being able to apply a process to 8 inches wafers is a good sign to the GaN industry for cost optimization. ExaGaN is still the wafer maker: Substrates are made in Grenoble (France), hometown of the French start-up, and using the proprietary process. Substrate making is key in GaN devices manufacturing, as it is highly challenging to growth GaN on top of another material (Silicon in this case). Still, it is necessary to stay in a reasonable cost ranges.
ExaGaN says it confirms the strength of their fablite business model, keeping control of manufacturing from material to device.
Source: ExaGaN Press release.