Infineon, announced today they start mass production of the successful EASY 1B power module using their SiC MOSFET CoolSiC.
The EASY platform is widely used in the motor drive and industrial area, including hybrid and electric vehicles, HVAC, Pumps, DC/DC converters and on-board chargers. EASY platform has always been using latest Infineon IGBT technology. It’s now the first platform to propose a Silicon Carbide MOSFET option in mass production.
Infineon announced their SiC MOSFET technology last year at PCIM, after a long wait. They claimed to wait to have a reliable and easy to use technology. The CoolSiC is designed to be chip-to-chip replacable with an IGBT. They share the same driving voltages and characteristics. It’s probably not a good way to get the best performances but it surely facilitates the move to SiC technology by easing the work of designers.
As the biggest power semiconductor manufacturer, Infineon sets a new standard in pushing for SiC, at last.
The SiC version of EASY 1B will start with the B6 at 1200V: a six-pack full-bridge three phase design. EASY 2B with half-bridge and TO247 discrete components will also be available. This last part seems anecdotal, but let’s keep in mind that both Tesla Model S and Tesla Model X use Infineon’s TO247 IGBTs in the motor drive. The switch to Silicon Carbide in electric cars may be closer than we think.