600V/10A GaN MISHEMT claimed to be a first for China:
Skysilicon, based in China, has released what it claims is the first GaN metal insulator semiconductor high electron mobility transistor (MISHEMT), N1BH60010A on an 8-inch GaN-on-Si wafer. This is the first 8-inch based GaN power device reported in China.
Skysilicon began the research on the GaN-on-Si power devices in July 2013. After 18 months of development, recently it successfully developed 600V/10A GaN MISHEMT on 8-inch silicon substrates, showing good switching characteristics and small parasitic capacitance.
Compared to a silicon super junction MOSFET, the GaN MISHEMT can reduce parasitic capacitance up to 90 percent says Skysilicon. The GaN research program in Skysilicon is funded by Chinese National Science and Technology Major Project (NSTMP), aiming to develop 8-inch based GaN-on-Si power devices and technologies.
Skysilicon is a semiconductor device manufacturer focused on power electronics. The main products of Skysilicon are discrete power device and power IC, MEMS sensors and compound semiconductor devices. The company built the GaN-on-Si power device platform on its own 8-inch manufactory line, which is suitable for high volume production.
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