Efficient Power Conversion (EPC) has announced the EPC2050, a 350V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

The EPC2050 is 1.95 mm x 1.95 mm (3.72 mm2) integrated a half bridge with gate drivers. It occupies five times less area than a comparable silicon solution, using the usual Wafer-Level Package (WLP) used by EPC corp. for all their devices. EPC’s 350V transistor can handle thermal conditions more efficiently than plastic packaged MOSFETs, according to the company.

“The performance and cost gap of silicon with eGaN technology widens with the 350 V, EPC2050, that is almost 20 times smaller than the closest silicon MOSFET.”

said Alex Lidow, EPC’s CEO.

 

EPC2050 350V GaN device transistor half bridge

The EPC9084 development board is a 350V maximum device voltage, half bridge featuring the EPC2050, and the Silicon Labs Si8274GB1-IM gate driver. This 51mm x 38 mm board is designed for optimal switching performance and contains all critical components for easy evaluation of the 350 V EPC2050 eGaN FET.

The EPC2050 eGaN FET is priced for 1K units at $3.19 each and the EPC9084 development board is priced at $118.75 each from Digikey.

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