Navitas produces 1st Half-Bridge GaN Power IC

Navitas, innovating start-up in WBG semiconductor, has announced the release of the first fully integrated IC in Gallium Nitride. It’s based on their AllGaN transistor platform.

Navitas is targetting charging solutions, fast-chargers and small power high-end converters with this half-bridge building block. GaN based transistor are able to operate at much higher frequency, with lower losses than currently used solutions for these converters: Super Junction MOSFET.

GaN transistor Navitas half-bridge IC

The NV6250 is a 650V half-bridge with intergrated Navitas driver technology iDrive. It switches at up to 2Mhz, all packed in 6x8mm QFN package.

Production is planned for Q2 2017 (which is very soon…).

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