Navitas, innovating start-up in WBG semiconductor, has announced the release of the first fully integrated IC in Gallium Nitride. It’s based on their AllGaN transistor platform.
Navitas is targetting charging solutions, fast-chargers and small power high-end converters with this half-bridge building block. GaN based transistor are able to operate at much higher frequency, with lower losses than currently used solutions for these converters: Super Junction MOSFET.
The NV6250 is a 650V half-bridge with intergrated Navitas driver technology iDrive. It switches at up to 2Mhz, all packed in 6x8mm QFN package.
Production is planned for Q2 2017 (which is very soon…).