Navitas produces 1st Half-Bridge GaN Power IC
Navitas, innovating start-up in WBG semiconductor, has announced the release of the first fully integrated IC in Gallium Nitride. It’s based on their AllGaN transistor platform.
Navitas is targetting charging solutions, fast-chargers and small power high-end converters with this half-bridge building block. GaN based transistor are able to operate at much higher frequency, with lower losses than currently used solutions for these converters: Super Junction MOSFET.
The NV6250 is a 650V half-bridge with intergrated Navitas driver technology iDrive. It switches at up to 2Mhz, all packed in 6x8mm QFN package.
Production is planned for Q2 2017 (which is very soon…).
Do you have any GaN solution for on-board charger of EV?
Hi John,
We are not a power devices manufacturer. But we can re-direct you to one. I will send you an e-mail.