Toshiba Corporation’s Storage & Electronic Devices Solutions Company today announced the launch of second generation 650V silicon carbide (SiC) schottky barrier diodes (SBDs) that improve on the surge forward current (IFSM) offered by the company’s current products by approximately 70%. Shipments of the new line-up of eight SiC schottky barrier diodes start today.
The new SiC schottky barrier diodes, fabricated with Toshiba’s second-generation SiC process, deliver approximately 70% better surge forward current than first generation products, and at the same time reduce the switching loss index of “RON*Qc” by around 30%, making them suitable for use in efficient power factor correction (PFC) schemes.
The new products are available in four current ratings of 4A, 6A, 8A, and 10A, either in a non-isolated “TO-220-2L” package or an isolated “TO-220F-2L” package. These products can contribute to improving the efficiency of power supplies in devices including 4K large screen LCD TVs, projectors and multifunction copiers, and in industrial devices such as telecommunication base stations and PC servers.
|Absolute Maximum Ratings||Electrical Characteristics|
|Forward DC Current||Non-repetitive Peak Forward Surge Current||Total Power Dissipation||Forward Voltage||Anode-cathode
|Junction Capacitance||Total Capacitive Charge|
|–||@ Half-sine Wave
0.25 to 1.0
|@VR=1 V||@VR=400 V|