Toshiba Launches 2nd Generation 650V SiC Schottky Barrier Diodes

Toshiba Corporation’s Storage & Electronic Devices Solutions Company today announced the launch of second generation 650V silicon carbide (SiC) schottky barrier diodes (SBDs) that improve on the surge forward current (IFSM) offered by the company’s current products by approximately 70%. Shipments of the new line-up of eight SiC schottky barrier diodes start today.

The new SiC schottky barrier diodes, fabricated with Toshiba’s second-generation SiC process, deliver approximately 70% better surge forward current than first generation products, and at the same time reduce the switching loss index of “RON*Qc” by around 30%, making them suitable for use in efficient power factor correction (PFC) schemes.

The new products are available in four current ratings of 4A, 6A, 8A, and 10A, either in a non-isolated “TO-220-2L” package or an isolated “TO-220F-2L” package. These products can contribute to improving the efficiency of power supplies in devices including 4K large screen LCD TVs, projectors and multifunction copiers, and in industrial devices such as telecommunication base stations and PC servers.

Package Characteristics
Absolute Maximum Ratings Electrical Characteristics
Forward DC Current Non-repetitive Peak Forward Surge Current Total Power Dissipation Forward Voltage Anode-cathode
Junction Capacitance Total Capacitive Charge
Symbol IF(DC) IFSM Ptot VF Ron Cj QC
Value Max Max Max Typ.
Typ. Typ. Typ.
Unit (A) (A) (W) (V) (mΩ) (pF) (nC)
Test Conditions/
Part Number
@ Half-sine Wave
t=10 ms
@IF(DC) @IF(DC)×
0.25 to 1.0
@VR=1 V @VR=400 V
Non- Isolation
TRS4E65F 4 39 55.6 1.45
120 165 10.4
TRS6E65F 6 55 68.2 82 230 15.1
TRS8E65F 8 69 83.3 62 300 19.7
TRS10E65F 10 83 107 48 400 24.4
TRS4A65F 4 37 33.6 1.45
120 165 10.4
TRS6A65F 6 52 35.4 82 230 15.1
TRS8A65F 8 65 37.5 62 300 19.7
TRS10A65F 10 79 39.7 48 400 24.4


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