iGaNPower designed a first 1200V E-Mode GaN HemT

iGaNPower, (GaN Power International) a GaN start-up based in Vancouver, Canada, has announced they designed and succeeded in manufacturing a first E-mode GaN high electron mobility transistor with a 1200V breakdown voltage.

This start-up is not part of the most visible GaN start-ups on the market today. It’s based in Canada, but seems to be part of Midea group, a Chinese electrical appliance manufacturer. They already have available devices, according to their website: 650V devices, in TO-220 or DFN 6×8, from 10 to 30 Amps, all shown as available (2 months leadtime), or even “in stock”.

Source: http://iganpower.com/news/

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