GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has moved into its new headquarters and R&D facility at 1145 Innovation Drive, in the heart of Kanata’s high-tech community.

The firm says the move was necessitated by its expansion over the past 12 months, and it plans for continued rapid growth as GaN devices replace legacy silicon-based semiconductors in power conversion and control applications worldwide.

“These new facilities will provide the resources and capabilities we need as we move rapidly from R&D to commercialization this year,”

says CEO Jim Witham. The new HQ and R&D facility is three times larger than the previous premises, with a tenfold increase in laboratory space. The labs have dedicated power and cooling.

“When you produce devices that can switch 200A or more, it calls for some highly specialized facilities to fully test them,” explains co-founder & president Girvan Patterson. “The power available in this location and our custom-designed labs will enable us to fully explore higher-power applications and substantially accelerate the long-term reliability testing of our devices.”

Staffing has already increased significantly over the past six months, and GaN Systems has expanded its global team as its power conversion devices (based on its proprietary Island Technology) are commercialized.

 Source: http://www.semiconductor-today.com/news_items/2014/JUN/GANSYSTEMS_240614.shtml?utm_source=Twitter&utm_medium=Twitter&utm_campaign=Twitter

0 replies

Leave a Reply

Want to join the discussion?
Feel free to contribute!

Leave a Reply

Your email address will not be published. Required fields are marked *