Full SiC power modules released by Panasonic and Sansha

Panasonic and Sansha Electric have announced that they have developed a compact SiC power module together with highly efficient operation of power switching systems. The SiC power module has sufficiently good reliability and greatly helps to reduce the size of power switching systems such as industrial inverters and power supplies.

The SiC power module integrates two SiC transistors into one package and achieves 6mΩ of on-state resistance with a rating current/voltage of 150A/1200V. The total volume of the module is reduced by one third compared to a conventional SiC power module. These features together with good reliability enable very compact and highly efficient power switching systems.

The developed SiC power module is based on two proprietary technologies. One is Panasonic’s SiC DioMOS (Diode-integrated MOSFET), which has the features of a reverse conducting diode without any external diode. The total chip area of SiC is reduced by half from a conventional SiC, which helps to reduce the total footprint of the module. The improved design of the DioMOS structure reduces on-state resistance to 6mΩ at 150A.

The second technology is Sansha Electric’s Techno Block module which uses solder bonding for the SiC chips without any wire bonding. This configuration reduces the height of the module by half from conventional ones as well as they can serve three times better endurance of power cycling tests.

These research and development results will be presented at the exhibition ‘The Applied Power Electrics Conference 2015’ from March 15 to 19, 2015 (Charlotte, North Carolina, US).

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