Wolfspeed, a Cree Company and a silicon carbide (SiC) power devices, power modules and system maker, has introduced a 1000V MOSFET.
SiC MOSFET Specifications:
The new 1000V, 65mOhm MOSFET is available in a through-hole, 4L-TO247 package and is listed as part number C3M0065100K and is currently available for purchase at Digikey, Mouser and Richardson RFPD. Wolfspeed plans to release another 1000V MOSFET in a 4L-TO247 package at 120mOhm (C3M0120100K) in the coming weeks. This package has a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s superior speed and efficiency.
The surface-mount versions of these devices, C3M0065100J and C3M0120100J, will be released later this year. Like the 4L-TO247, the surface mount devices include a Kelvin-source pin to help minimize gate-ringing and reduce system losses.
Target markets and applications:
“Supporting the widespread implementation of off-board charging stations, Wolfspeed’s technology enables smaller, more efficient charging systems that provide higher power charging at lower overall cost. This market requires high efficiency and wide output voltage range to address the various electric vehicle battery voltages being introduced by automotive suppliers,”
explained John Palmour, CTO of Wolfspeed.
“Wolfspeed’s new 1000V SiC MOSFET offers system designers ultra-fast switching speeds with a fraction of a silicon MOSFET’s switching losses. The figure-of-merit delivered by this device is beyond the reach of any competing silicon-based MOSFET,” Palmour added.