Wolfspeed, former power electronics division of Cree, has expanded its line of SiC (Silicon Carbide) MOSFETs. Generation 3, also called C3M(r) platform, features lower inductance and RdsON.
The 1200V device comes in addition to the 900V and 1000V devices previously available. It also comes in a new package as surface-mount 7L D2PAK, available in a few weeks. The more classics 4L TO-247 and SMD packages are already available, with respectively C3M0075120K and C3M0075120J part numbers. It’s a 30 A maximum current MOSFET, with as low as 75 mΩ RdsON.
For more details, you can check the datasheet here.