Mitsubishi Electric was present during ICSCRM 2017 (International Conference on Silicon Carbide and Related Materials). They seized the opportunity to present one of their latest developments. In its SiC MOSFET, MELCO (Mitsubishi Electric Corporation) R&D team developed a new structure for the Source. Instead of a single region, there are now two region of different doping to better control the source series resistance. This structure reduces the current flow during short circuits.
MELCO claims that the On-Resistance is reduced by 40% at room temperature and power loss by 20%. These numbers are based on a comparison with conventional SiC MOSFET at 1200V.
This new device design also allows circuit simplification. Designers can now use Si short-circuit protection circuits and apply it to Silicon Carbide devices, without making any modifications. The Silicon Carbide MOSFET is dedicated to Power Modules.
Mitsubishi Electric’s development teams will further refine the new device, aiming to make it available commercially from the year 2020.
Source: Mitsubishi Electric