VisIC announces 650V GaN devices

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VisIC Technologies, Ltd., a technology-leading developer of gallium nitride power switching semiconductors, is proud to announce their first normally OFF gallium nitride (GaN) power switch. Using VisIC’s gallium nitride power transistors, the ALL-Switch (Advanced Low-Loss Switch) will provide the fastest power-switching devices available amongst all low resistance switching components. ALL-Switch will be used in a range of customer applications including photovoltaic inverters, UPS, hybrid electric vehicles/electric vehicles and high voltage DC-DC conversion.

Tamara Baksht (PhD), CEO and founder of VisIC Technologies, said:

“We are very excited to soon be able to sample our products to OEMs. With the combinations of our technology and the cost of GaN on Si, we see ourselves able to meet our goal to deliver GaN performance to OEMs at Silicon MOSFET prices. This is the long awaited “game-changer” for GaN in power conversion devices. Delivering this promise to the very large 650V applications space will rapidly expand the use of GaN-based components since GaN also provides the efficiency gains, cost reductions and size reductions OEMs want to deliver to their customers in systems currently using Silicon IGBTs and MOSFETs.”

VisIC Technologies Ltd is a GaN fabless semiconductor company. VisIC Technologies was founded by Dr. Tamara Baksht (PhD) and Gregory Bunin, physicists who previously developed GaN-based RF components in the Israeli defense industry.

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