An impressive Silicon Carbide MOSFET teardown report
The SCT30N120 is on of the latest Silicon Carbide based Power MOSFET from ST Microelectronics.
It’s a 1200V, 45 A device with a low 90mΩ RdsON. The package is a HiP247 which is a proprietary innovation from ST Microelectronics, based on TO 247 package.
All the inside of this Wide Band Gap semiconductor based power device are revealed in this teardown report from Ltec.
Content of the report
- Die image
- Die plane analysis
- Die plane analysis (SEM)
- Cross-sectional Analysis
- Material Analysis (EDX)