Mitsubishi Electric claims to have achieved highest power density in Power modules thanks to its full SiC 6.5kV power module presented today.
Mitsubishi Electric chose to use a diode integrated with the MOSFET on the same die. No further information is given about the device. However, it seems this power module reaches unprecedented power density. The power module is compatible with Mitsubishi Electric’s HV100 Silicon IGBT power module range.
The development project for this power module is in partnership with NEDO (New Energy and Industrial Technology Development Organization). We can also count DOWA electronics materials, Mitsubishi Materials, Denka, and Japan Fine Ceramic among the participants to this project, together with three Japanese Universities: Tokyo Institute of Technology, Shibaura Institute of Technology, and Kyushu Institute of Technology.